st183s series inverter grade thyristors stud version 195a 1 bulletin i25179 rev. c 12/96 www.irf.com features all diffused design center amplifying gate guaranteed high dv/dt guaranteed high di/dt high surge current capability low thermal impedance high speed performance typical applications inverters choppers induction heating all types of force-commutated converters i t(av) 195 a @ t c 85 c i t(rms) 306 a i tsm @ 50hz 4900 a @ 60hz 5130 a i 2 t@ 50hz 120 ka 2 s @ 60hz 110 ka 2 s v drm /v rrm 400 to 800 v t q range 10 to 20 s t j - 40 to 125 c parameters st183s units major ratings and characteristics case style to-209ab (to-93)
st183s series 2 bulletin i25179 rev. c 12/96 www.irf.com voltage v drm /v rrm , maximum v rsm , maximum i drm /i rrm max. type number code repetitive peak voltage non-repetitive peak voltage @ t j = t j max. vvma 04 400 500 08 800 900 electrical specifications voltage ratings frequency units 50hz 570 370 900 610 7040 5220 400hz 560 360 940 630 3200 2280 1000hz 500 300 925 610 1780 1200 a 2500hz 340 190 760 490 880 560 recovery voltage vr 50 50 50 50 50 50 voltage before turn-on vd v drm v drm v drm rise of on-state current di/dt 50 50 - - - - a/ m s case temperature 60 85 60 85 60 85 c equivalent values for rc circuit 47 w / 0.22f 47 w / 0.22f 47 w / 0.22f i tm 180 o el 180 o el 100 m s i tm i tm current carrying capability v i t(av) max. average on-state current 195 a 180 conduction, half sine wave @ case temperature 85 c i t(rms) max. rms on-state current 306 dc @ 74c case temperature i tsm max. peak, one half cycle, 4900 t = 10ms no voltage non-repetitive surge current 5130 a t = 8.3ms reapplied 4120 t = 10ms 100% v rrm 4310 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 120 t = 10ms no voltage initial t j = t j max 110 t = 8.3ms reapplied 85 t = 10ms 100% v rrm 78 t = 8.3ms reapplied i 2 ? t maximum i 2 ? t for fusing 1200 ka 2 ? s t = 0.1 to 10ms, no voltage reapplied parameter st183s units conditions on-state conduction ka 2 s st183s 40
st183s series 3 bulletin i25179 rev. c 12/96 www.irf.com v tm max. peak on-state voltage 1.80 i tm = 600a, t j = t j max, t p = 10ms sine wave pulse v t(to)1 low level value of threshold voltage v t(to)2 high level value of threshold voltage r t 1 low level value of forward slope resistance r t 2 high level value of forward slope resistance i h maximum holding current 600 t j = 25c, i t > 30a i l typical latching current 1000 t j = 25c, v a = 12v, ra = 6 w, i g = 1a parameter st183s units conditions on-state conduction 1.40 (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. 1.45 (i > p x i t(av) ), t j = t j max. v 0.67 (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. 0.58 (i > p x i t(av) ), t j = t j max. m w ma di/dt max. non-repetitive rate of rise t j = t j max, v drm = rated v drm of turned-on current i tm = 2 x di/dt t j = 25c, v dm = rated v drm , i tm = 50a dc, t p = 1s resistive load, gate pulse: 10v, 5 w source t j = t j max, i tm = 300a, commutating di/dt = 20a/s v r = 50v, t p = 500s, dv/dt: see table in device code switching parameter st183s units conditions 1000 a/s t d typical delay time 1.1 min max dv/dt maximum critical rate of rise of t j = t j max., linear to 80% v drm , higher value off-state voltage available on request i rrm max. peak reverse and off-state i drm leakage current parameter st183s units conditions blocking 500 v/ m s 40 ma t j = t j max, rated v drm /v rrm applied p gm maximum peak gate power 60 p g(av) maximum average gate power 10 i gm max. peak positive gate current 10 a t j = t j max, t p 5ms +v gm maximum peak positive gate voltage -v gm maximum peak negative gate voltage i gt max. dc gate current required to trigger v gt max. dc gate voltage required to trigger i gd max. dc gate current not to trigger 20 ma v gd max. dc gate voltage not to trigger 0.25 v triggering parameter st183s units conditions 20 5 vt j = t j max, t p 5ms 200 ma 3v t j = t j max, v a = 12v, ra = 6 w t j = t j max, rated v drm applied t q max. turn-off time 10 20 s wt j = t j max, f = 50hz, d% = 50
st183s series 4 bulletin i25179 rev. c 12/96 www.irf.com ordering information table 1 - thyristor 2 - essential part number 3 - 3 = fast turn off 4 - s = compression bonding stud 5 - voltage code: code x 100 = v rrm (see voltage ratings table) 6 - p = stud base 3/4" 16unf-2a m = stud base metric threads m16 x 1.5 7 - reapplied dv/dt code (for t q test condition) 8 -t q code 9 - 0 = eyelet terminals (gate and aux. cathode leads) 1 = fast-on terminals (gate and aux. cathode leads) 2 = flag terminals (for cathode and gate terminals) - critical dv/dt: none = 500v/sec (standard value) l = 1000v/sec (special selection) t j max. junction operating temperature range -40 to 125 t stg max. storage temperature range -40 to 150 r thjc max. thermal resistance, junction to case 0.105 dc operation r thcs max. thermal resistance, case to heatsink 0.04 mounting surface, smooth, flat and greased t mounting torque, 10% 31 nm (275) (ibf-in) 24.5 nm (210) (ibf-in) wt approximate weight 280 g case style to-209ab (to-93) see outline table parameter st183s units conditions thermal and mechanical specifications c k/w non lubricated threads 5 68 9 st 18 3 s 08 p f n 0 3 4 10 7 device code 12 lubricated threads dv/dt - t q combinations available dv/dt (v/s) 20 50 100 200 400 10 cn dn en fn * hn 12 cm dm em fm hm 15 cl dl el fl * hl 18 cp dp ep fp hp 20 ck dk ek fk hk 180 0.016 0.012 120 0.019 0.020 90 0.025 0.027 k/w t j = t j max. 60 0.036 0.037 30 0.060 0.060 conduction angle sinusoidal conduction rectangular conduction units conditions d r thjc conduction (the following table shows the increment of thermal resistence r thjc when devices operate at different conduction angles than dc) * standard part number. all other types available only on request. t q (s) 10
st183s series 5 bulletin i25179 rev. c 12/96 www.irf.com case style to-209ab (to-93) all dimensions in millimeters (inches) fast-on terminals outline table case style to-209ab (to-93) flag all dimensions in millimeters (inches) ceramic housing 27 .5 (1 .08) ma x. 38.5 (1.52) max. 3 (0.12) 80 ( 3.15) ma x. dia. 27.5 (1.08) max. 16 (0 .63) ma x. flag terminals 1.5 (0.06) dia. sw 32 22 (0.89) dia. 6.5 (0.25) 13 (0.5 1) 14 (0.55) *for metric device. m16 x 1.5 - lenght 21 (0.83) max. 3/4"-16unf-2a* amp. 280000-1 ref-250 2 white shrink red shrink red cathode red silicon rubber +i 210 (8.26) 10 (0.39) c.s. 0.4mm (0.0006 s.i.) 38.5 (1.52) max. + - 220 (8.66) 10 (0.39) ceramic housing 90 (3.54) min. 4.3 (0.17) dia. 19 (0.75) max. 8.5 (0.33) dia. * for metric device : m16 x 1.5 - lenght 21 (0.83) max. c.s. 25mm 2 (0.039 s.i.) flexible lead 4 (0.16) max. 2 2 ( 0 . 8 6 ) mi n . ma x. 35 (1.38) max. 3/4"-16unf-2a * 27.5 (1.08) sw 32 27.5 (1.08) max. dia. white gate 9 . 5 ( 0 . 3 7 ) mi n . 16 (0.63) max.
st183s series 6 bulletin i25179 rev. c 12/96 www.irf.com fig. 3 - on-state power loss characteristics fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 4 - on-state power loss characteristics 80 90 100 110 120 130 0 20 40 60 80 100 120 140 160 180 200 maximum allowable case temperature ( c) 30 60 90 120 180 average on-state current (a) conduction angle st183s series r (dc) = 0.105 k/w thjc 70 80 90 100 110 120 130 0 50 100 150 200 250 300 350 dc 30 60 90 120 180 average on-state current (a) maximum allow able ca se temperat ure ( c) conduction period st183s series r (dc) = 0.105 k/w thjc 25 50 75 100 125 maximum allowable ambient temperature ( c) r = 0 . 0 8 k / w - d e l t a r t h s a 0 . 1 k / w 0 . 1 6 k/ w 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 5 k / w 0 . 8 k / w 1 . 2 k / w 0 50 100 150 200 250 300 350 0 20 40 60 80 100 120 140 160 180 200 180 120 90 60 30 rms limit conduction angle maximum average on-state power loss (w) average on-state current (a) st 183s series t = 125c j 25 50 75 100 125 maximum allowable ambient temperature ( c) r = 0 . 0 8 k / w - d e l t a r t h s a 0 . 1 k / w 0 . 1 6 k / w 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 5 k / w 0 . 8 k / w 1 . 2 k / w 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) st183s series t = 125c j
st183s series 7 bulletin i25179 rev. c 12/96 www.irf.com fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristic fig. 10 - reverse recovery current characteristics fig. 9 - reverse recovered charge characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 2000 2500 3000 3500 4000 4500 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) initial t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j st183s series at any rated load condition and with rated v applied follow ing surge. rrm 100 1000 10000 11.522.533.54 t = 25 c instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j st183s series j 2000 2500 3000 3500 4000 4500 5000 0.01 0.1 1 pulse train duration (s) maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. peak half sine wave on-state current (a) in itial t = 125 c no voltage reapplied rated v reapplied rrm j st183s series 0.001 0. 01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) th j c transient thermal impedance z (k/w) steady state value r = 0.105 k/w (dc operation) thj c st183s ser ies 0 20 40 60 80 100 120 140 160 0 20406080100 rate of fall of on-state current - di/dt (a/ s) i = 500 a 300 a 200 a 100 a 50 a maximum reverse recovery current - irr (a) st183s series t = 125 c j tm 0 50 100 150 200 250 0 20406080100 rate of fall of on-state current - di/dt (a/ s) i = 500 a 300 a 200 a 100 a 50 a maximum reverse recovery charge - qrr ( c) st183s series t = 125 c j tm
st183s series 8 bulletin i25179 rev. c 12/96 www.irf.com fig. 13 - frequency characteristics fig. 11 - frequency characteristics fig. 12 - frequency characteristics 1e1 1e2 1e3 1e4 50 hz 400 2500 100 pulse basew idth ( s) 1000 1500 3000 200 500 snubber circuit r = 47 ohms c = 0.22 f v = 80% v s s d drm 5000 st183s series sinusoidal pulse t = 85c c tp 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 2500 100 pulse basewidth ( s) peak on-state current (a) 1000 1500 3000 200 500 snubber circuit r = 47 ohm s c = 0. 22 f v = 80% v s s d drm 5000 st183s seri es sinusoidal pulse t = 60c c 1e4 tp 1e1 1e2 1e3 1e4 1e11e21e31e4 50 hz 400 100 1000 1500 200 pulse basewidth ( s) peak on-state current (a) 5000 2500 snubber circuit r = 47 ohms c = 0.22 f v = 80% v s s d drm st183s series trap ezoid al pulse t = 60 c di/dt = 50a/s c 1e4 500 3000 10000 1e1 1e2 1e3 1e4 1e11e21e31e4 50 hz 400 2500 100 1000 1500 200 pulse basewidth ( s) peak on-sta te current (a) 5000 snubber circuit r = 47 ohms c = 0.22 f v = 80% v s s d drm st183s seri es trapezoidal pulse t = 60c di/dt = 100a/s c tp 1e4 10000 500 3000 1e1 1e2 1e3 1e4 50 hz 400 100 1000 1500 200 pulse basewidth ( s) 5000 2500 snubber circuit r = 47 ohms c = 0.22 f v = 80% v s s d drm st183s series trapezoida l pu lse t = 85c di/dt = 50a/s c 500 3000 10000 1e1 1e1 1e2 1e3 1e4 50 hz 400 2500 100 1000 1500 200 pulse basewidth ( s) 5000 snubber circuit r = 47 ohms c = 0. 22 f v = 80% v s s d drm st183s series tra pezoid al pulse t = 85 c di/dt = 100a/s c tp 10000 500 3000 1e1
st183s series 9 bulletin i25179 rev. c 12/96 www.irf.com fig. 14 - maximum on-state energy power loss characteristics 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd ig d (b) (a) tj=25 c tj=125 c tj= -40 c (1) (2) instantaneous gate current (a) instantaneous gate voltage (v) rectangular gate pulse a) recommended load lin e for b) recommended load line for <=30% r ated di/dt : 10v, 10ohms rated di/dt : 20v, 10ohms; tr <=1 s tr<=1 s (1) pgm = 10w, tp = 20ms (2) pgm = 20w, tp = 10ms (3) pgm = 40w, tp = 5ms (4) pgm = 60w, tp = 3.3ms (3) device: st183s series (4) fr equency limited by pg(av) fig. 15 - gate characteristics 1e1 1e2 1e3 1e4 1e5 1e1 1e2 1e3 1e4 pulse basewidth ( s) 20 jo ules per pulse 2 1 0.5 0.2 0.1 peak on-state current (a) 0.3 10 5 st183s series sinusoidal pu lse tp 1e4 1e1 1e2 1e3 1e4 pulse basewidth ( s) 20 jou les p er pulse 2 1 0.5 0.2 0.1 10 5 st183s series recta ngula r pulse di/dt = 50a/ s tp 1e1 0.3
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